Speaker
Sally Seidel
(University of New Mexico)
Description
We report on a novel 3D sensor design, featuring very small inter-electrode distance, aimed at controlled charge multiplication at voltages of the order of 100 V, both before and after irradiation. Moderate gain values of a few units are achieved, which are however sufficient to compensate the loss of charge signal due to the use of thin substrates and to counteract charge trapping effects even after very large radiation fluences. The devices have been studied with the aid of TCAD simulations, allowing the main technological and design issues to be effectively addressed and the performance to be predicted. The first 3D diode prototypes were fabricated at FBK and initial results from the experimental characterization at UNM demonstrate the feasibility of the proposed concept.
Primary author
Sally Seidel
(University of New Mexico)
Co-authors
Cinzia Da Via
(University of Manchester)
D.M.S. Sultan
(University of Geneva)
Gian-Franco Dalla Betta
(University of Trento and TIFPA INFN)
Lucio Pancheri
(University of Trento and TIFPA INFN)
Marco Povoli
(SINTEF)
Martin Hoeferkamp
(University of New Mexico)
Maurizio Boscardin
(TIFPA INFN and FBK, Trento)
Roberto Mendicino
(University of Trento and TIFPA INFN)
Sabina Ronchin
(TIFPA INFN and FBK)
